High Density Ion Implanted Contiguous Disk Bubble Technology.

Abstract

Ion implanted contiguous disk bubble memory devices, which were designed and fabricated are being tested. The aim of this testing is to identify the strongest and the weakest elements of these circuits with the hope of designing a fully operational four micron period device. The initial phase of testing has involved obtaining minor loop propagation bias margins, observing the failure mechanisms and attempting to discover the reasons for these failure. Future work will include similar observation for generation, transfer and detection including both bias and current amplitude and phase margins.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1985
Accession Number
ADA174999

Entities

People

  • M. H. Kryder

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Bubble Memories
  • Computers
  • Coordinate Systems
  • Deuterium
  • Elements
  • Engineering
  • Equations
  • Failure Mode And Effect Analysis
  • Films
  • Materials
  • Memory Devices
  • Observation
  • Orientation (Direction)
  • Phase
  • Scientific Research
  • Standards

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design