Interfacial Structure of In/Pt/GaAs Heterojunction Ohmic Contacts.

Abstract

Graded heterojunction InGaAs ohmic contracts to n-GaAs have been prepared which show improved electrical and morphological properties compared with other diffused contacts. The improvements result primarily from the use of a thin (400 A) Pt layer between the 4000-A In layer and the substrate to control the reaction of the In and the GaAs. A study of chemically etched samples using energy dispersive x-ray (EDX) analysis has revealed the formation of a smooth In(x)Ga(1-x)As heterojunction interface. Keywords include: Heterojunction arsenide, Heterojunction, Indium gallium arsenide, and Ohmic contacts.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1986
Accession Number
ADA175102

Entities

People

  • Dean C. Marvin
  • Martin S. Leung
  • Neil A. Ives

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Crystals
  • Diffraction
  • Electron Energy
  • Electron Microscopes
  • Electron Spectroscopy
  • Electrons
  • Field Effect Transistors
  • Low Angles
  • Metal-Semiconductor Junctions
  • Metals
  • Spectra
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene