The International Conference on Amorphous and Liquid Semiconductors (9th).
Abstract
A dominant theme in much of the work was the study of disordered systems. A new scaling theory of localization was produced. The basic concept involved the use of conductance, in its dependence on microscopic sample size, as the coupling constant of a renormalization group treatment. They showed that the mobility edge corresponds to a fixed point. Experiments on thin films have provided good confirmation of the general ideas and suggest that the inelastic scattering length sets the scale size. Studies were made of antiferromagnetism and superconductivity, two phenomena which coexist in some rare earth intermetallic compounds. A large, anomalous dip in the critical magnetic field required to destroy superconductivity is observed around the antiferromagnetic phase transition temperature. Mechanisms for thermal doping of amorphous semiconductors were investigated that have long time transient behavior of their electronic properties. The entropic contributions of thermally induced effects, which are amphoteric with respect to doping characteristics, may provide the basis for new electronic devices. The localization problem retains its interest inasmuch as there is still no satisfactory theory dealing with magnetic field effects. It seems that the field effects on localized wave functions is very different as between weak and strong fields.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 11, 1979
- Accession Number
- ADA175367
Entities
Organizations
- Princeton University