Isothermal Vapor Phase Epitaxy of Mercury Cadmium Telluride,

Abstract

A model is presented for the thermodynamic and kinetic basis of isothermal vapor phase epitaxy (ISOVPE) of mercury cadmium telluride. Growth is the result of a combination of transport of Te2 and Hg from the source to the substrate and interdiffusion between Hg and Cd in the growing layer. Using a Te-rich mercury cadmium telluride source, it is possible to fix the surface composition of the growing layer. The observed effects of time, source to substrate spacing, temperature, and mercury overpressure are explained using the model.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1986
Accession Number
ADA175656

Entities

People

  • D. A. Stevenson
  • J. G. Fleming

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Diffusion
  • Electronic Materials
  • Energy
  • Free Energy
  • Geometry
  • Heat Of Activation
  • Kirkendall Effect
  • Materials
  • Overpressure
  • Partial Pressure
  • Phase
  • Polarity
  • Pressure Gradients
  • Solid Solutions
  • Thickness
  • Vapor Phases
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Space