Observation of Strongly Wavevector Dependent Raman Scattering by LO Phonons in GaAs Near the E sub 0 Gap.

Abstract

Stimulated Raman gain spectra were recorded for photon energies approaching the GaAs E sub 0 bandgap. The results support intrinsic deformation potential and q-dependent Froehlich scattering mechanisms, in contrast to the impurity mechanisms previously proposed to explain above bandgap backscattering experiments. Keywords: Raman scattering; Gallium arsenide; Stimulated Raman gain.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1986
Accession Number
ADA175744

Entities

People

  • J. B. Wessel
  • S. M. Beck

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Absorption
  • Air Force
  • Backscattering
  • Chemical Compounds
  • Chemistry
  • Diffraction
  • Dye Lasers
  • Forward Scattering
  • Frequency
  • Intensity
  • Laser Beams
  • Lasers
  • Observation
  • Physics Laboratories
  • Raman Scattering
  • Scattering
  • Spectroscopy

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics