Growth of HgZnTe Layers by LPE Technique.

Abstract

The objective of this project is to develop liquid phase epitaxial layers of Hgl-xZnxTe and to study their possible applicability as a material for IR detectors. The program for the first year includes two tasks: 1. Optimization of the growth process of the HgZnTe epilayers. 2. Growth of high Zn content Cdl-yZnyTe crystals for substrates which are lattice matched with the epilayers. In the present interim report experimental details and results concerning the two tasks are described.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1986
Accession Number
ADA175786

Entities

People

  • Ariel Sher

Organizations

  • Israel Atomic Energy Commission

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contractors
  • Contracts
  • Crystals
  • Detectors
  • Diffusion
  • Governments
  • Infrared Detectors
  • Liquid Phases
  • Liquids
  • Materials
  • Optimization
  • Phase
  • Single Crystals
  • Substrates
  • Thickness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering