Si-F Bond Directions on Si(100). A Study by ESDIAD.
Abstract
The first observation of ion angular distribution originating from electron stimulated desorption of an adsorbed atomic species on a semiconductor surface (ESDIAD) is described. F+ is emitted from Si(100)-(2 x 1) along 4 azimuths corresponding to the principal crystal axes. The most probable F+ energy is 2.4 eV. The F+ angle, alpha = 36 + or - 5 degrees to the surface normal, corresponds closely to the Si-F surface bond direction. This F+ angular distribution is consistent with F bonding to Si dimers which are in two orthogonal reconstructions on Si(100)-(2 x 1). The threshold electron energy, (V sub T) superscript c = 27.5 + or - 1 eV for F+ production from the Si-F surface species.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 05, 1987
- Accession Number
- ADA175884
Entities
People
- J. T. Yates Jr.
- M. J. Dresser
- Michael J. Bozack
- P. Taylor
- Wolfgang J. Wolfgang J. Choyke
Organizations
- University of Pittsburgh