Blue-Green Laser Diode Research Program.
Abstract
Throughout the fourth quarter of the first program year, work in the St. Paul Laboratory has concentrated on completing the growth matrix study relating the properties of ZnSe grown on (100) GaAs to growth temperature and beam-pressure ratio (BPR). In the same period, the Toronto effort has concentrated on a comparison of the properties of ZnSe films grown on (100) GaAs with those grown on (100) Ge during the same growth run. In the course of the above efforts, there have been several achievements which are particularily noteworthy in that they indicate that our epitaxial films are of exceptionally high quality. First we have achieved the highest peak mobility (above 7,000 sq cm/V. sec.) ever observed for MBE-grown ZnSe. Second, we have reduced the donor concentration and, thereby, increased the compensation ratio to the point that unintentionally-incorporated acceptor bound exciton emission is clearly discernible in the photoluminescence spectra. Lastly, we have demonstrated, for the first time, electron-beam pumped laser action in epitaxial ZnSe films, and have observed low threshold current densities at temperatures as high as room temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1986
- Accession Number
- ADA175912
Entities
Organizations
- 3M