Fundamental Studies and Device Development in Beta Silicon Carbide.

Abstract

THe research of this reporting period has involved 1) the growth of the Chemical Vapor Deposition(CVD) alpha-SiC on monocrystalline beta-silicon carbide (sic)substrates, 2) the attempt to grown A1N buffer layers between Si and SiC, 3) high temperature ion implantation ion implantation, and 4) damage production studies, 5) the continued development of contacts for n- and p- type SiC, 6) reactive ion and plasma etching and 7) divide design and fabrication. Keywords: Electronic materials; In situ doping; Electron microscopy; Secondary ion mass spectroscopy; Electrical properties; Aluminum nitride; Rutherford Backscattering.

Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1987
Accession Number
ADA176035

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Aluminum Nitrides
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electrical Properties
  • Electron Microscopy
  • Electronic Materials
  • High Temperature
  • Implantation
  • Ion Implantation
  • Ions
  • Mass Spectroscopy
  • Materials
  • Silicon Carbide
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene