Investigation of Defect and Electronic Interactions Associated with GaAs Device Processing.
Abstract
The investigation of defects in Gallium Arsenide is persued along three lines especially important for device processing: (a) origin and control of native midgap levels; (b) the role of vanadium in achieving semi-insulating GaAs; and (c) feasibility of achieving titanium doped semi-insulating III-v crystals. By employing high resolution optical absorption and DLTS measurements, we obtained an accurate calibration for the determination of EL2 by optical absorption. The new revised calibration factor is about 40% larger than the commonly used value. Vanadium in GaAs introduces only an acceptor level at (E sub c) -0.15 eV. Accordingly, the vanadium level cannot be involved in compensation mechanism responsible for semi-insulating GaAs. However, vanadium can help to achieve SI material due to its active role as a gettering center reducing concentration of Si. A search for an impurity with a midgap donor level has led to the discovery of new semi-insulating III-V compounds based on titanium doping. For the first time deep levels are identical due to titanium in GaAs and InP, and the midgap location (E sub c) -0.63 eV) of the Ti donor in InP can be used to obtain SI-InP with a resistivity exceeding -10 million ohm-cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 22, 1986
- Accession Number
- ADA176123
Entities
People
- Harry C. Gatos
- Jacek Lagowski
Organizations
- Massachusetts Institute of Technology