Microcharacterization of Solid State MTLS by Secondary Ion Mass Spectrometry.
Abstract
Methods for the microcharacterization of solid state surfaces using the ion microprobe (SIMS) were investigated. Methods of obtaining quantitative depth and concentration information on multilayer thin film and interfaces were explored. In addition to superlattice quantification, in situ ion implantation and examination of ion implantation damage were accomplished. SIMS ion yield variations for estimation of matrix effects were investigated. A cryogenic sample stage was designed and built for low temperature solid state studies on the ion microprobe. A study of spatial resolution of the ion microscope has resulted in extending the resolution from 500 nm to 100nm. The technique of dark field ion microscopy was developed for correlating surface relief with chemical contrast.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 18, 1986
- Accession Number
- ADA176134
Entities
People
- George H. Morrison
Organizations
- Cornell University