Microcharacterization of Solid State MTLS by Secondary Ion Mass Spectrometry.

Abstract

Methods for the microcharacterization of solid state surfaces using the ion microprobe (SIMS) were investigated. Methods of obtaining quantitative depth and concentration information on multilayer thin film and interfaces were explored. In addition to superlattice quantification, in situ ion implantation and examination of ion implantation damage were accomplished. SIMS ion yield variations for estimation of matrix effects were investigated. A cryogenic sample stage was designed and built for low temperature solid state studies on the ion microprobe. A study of spatial resolution of the ion microscope has resulted in extending the resolution from 500 nm to 100nm. The technique of dark field ion microscopy was developed for correlating surface relief with chemical contrast.

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Document Details

Document Type
Technical Report
Publication Date
Dec 18, 1986
Accession Number
ADA176134

Entities

People

  • George H. Morrison

Organizations

  • Cornell University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Biospecimens
  • Calibration
  • Classification
  • Elements
  • Energy
  • Epitaxial Growth
  • Heat Treatment
  • Image Processing
  • Implantation
  • Ion Implantation
  • Ions
  • Mass Spectrometry
  • Materials
  • Microscopes
  • Microscopy
  • Semiconductors
  • Spectrometry

Readers

  • Thin Film Deposition Science.