Synchrotron Radiation Studies of MBE-Grown Semiconductor and Metal Surfaces and Interfaces.

Abstract

The work for the contract period addressed the physics and chemistry underlying the formation of the electronic structure at semiconductor oxide and semiconductor metal interfaces. Using photoemission spectroscopy a new oxidation model has been proposed for GaAs and InP. Extensive studies of transition metals deposited on GaAs and InP led to the first concrete identification of interface states responsible for the formation of the Schottky barrier, namely d-derived impurity levels of transition metal atoms in the semiconductor. Keywords: Gallium Arsenide; Indium Phosphide; Antimony; Oxidation; Transition metals; Substitutional impurities; Schottky barrier; Ordered overlayer; Core level spectroscopy; Photoemission; Inverse photoemission; Line shape analysis; Spectral decompositions.

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Document Details

Document Type
Technical Report
Publication Date
Dec 08, 1986
Accession Number
ADA176445

Entities

People

  • Rudolf Ludeke

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Conduction Bands
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Fermi Levels
  • High Resolution
  • Kinetic Energy
  • Measurement
  • Metals
  • Synchrotron Radiation
  • Three Dimensional
  • Transition Metals
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene