Redistribution of Arsenic in Silicon during High Pressure Thermal Oxidation.

Abstract

The redistribution of arsenic in silicon has been studied in terms of the relative rates of oxidation and diffusion in silicon. Redistribution of arsenic in silicon during oxidation is dependent on the ratio of oxidation rate to the diffusivity in silicon, B/D superscript 1/2, as well as on the thermodynamic equilibrium segregation coefficient. It was found that for the value of B/D superscript 1/2, larger than 50, most of the arsenic impurity becomes trapped in silicone dioxide. For the smaller value of B/D superscript 1/2, snowplowing of arsenic results.

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Document Details

Document Type
Technical Report
Publication Date
Feb 03, 1987
Accession Number
ADA176769

Entities

People

  • Eugene A. Irene
  • J. K. Srivastava
  • M. Z. Numan
  • Seong S. Choi
  • W. K. Chu

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Astronomy
  • Availability
  • Chemistry
  • Classification
  • Diffusion
  • Diffusivity
  • Elements
  • High Pressure
  • Low Temperature
  • Measurement
  • Military Research
  • North Carolina
  • Oxidation
  • Oxides
  • Security
  • Universities

Fields of Study

  • Materials science

Readers

  • Analytical Mechanics
  • Semiconductor Device Technology