Application of the ALE and MBE Methods to the Growth of Layered Hg sub 1-x Cd sub x Te Films.
Abstract
Molecular Beam Epitaxial growth of Hg1-ICdITe films of 8 x 8 sq mm in size has been carried out at high mercury concentration with I ranging from 0.2 to 0.4 for various samples. Most of the films are deposited onto semi-insulating 2 deg off (100) GaAs substrates on which a CdTe buffer layer of 0.5-2 to micrometer is first grown. The films are single crystals exhibiting a (100) orientation in most cases (occasionally a (111) orientation is observed, too). Film thickness is varied from 500 nm to 2 micrometer. A diffusion barrier cap of 20 nm is deposited on top of this layered structure. Infrared absorption spectra are measured for a few selected samples. An absorption spectrum and growth parameters of a sample are shown. The absorption edge appears at the wavelength of about 8.5 micrometer. Keywords: Mercury Cadmium Telluride.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 26, 1986
- Accession Number
- ADA176797
Entities
People
- Markus Pessa
Organizations
- Tampere University of Technology