Fracture and Hardness of Semiconductor Alloys.
Abstract
We demonstrate that the atomic distribution of constituents in semiconductor alloys is never random. There are always interactions causing correlations; the degree and nature of the correlations depend on which interactions dominate and on the growth condition. We have identified most of the interactions that are expected to cause correlations: electron/electron Coulomb-interactions, and chemical and strain energies. We have developed a method to calculate accurate bond lengths, bond energies, and elastic coefficients for semiconductor compounds. Work has begun to incorporate anisotropicity into the theory of hardness. A calculation of the vacancy formation energies in compounds and dilute alloys has been completed; it will be generalized to concentrated alloys in the future.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 05, 1986
- Accession Number
- ADA176800
Entities
People
- A. Sher
- A.-b. Chen
- M. Berding
- M. Van Schilfgaarde
Organizations
- SRI International