Single Event Upset Rate Estimates for a 16-K CMOS (Complementary Metal Oxide Semiconductor) SRAM (Static Random Access Memory).
Abstract
A radiation-hardened 16K CMOS SRAM has been developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's 90% worst case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1986
- Accession Number
- ADA176857
Entities
People
- J. S. Browning
- Rokutano Koga
- W. A. Kolasinski
Organizations
- The Aerospace Corporation