Comparison of Test Structures Used for the Measurement of Low Resistive Metal-Semiconductor Contacts,

Abstract

Specific contact resistivity rho (c) (O low-sq cm), which can be extracted from measured contact resistance Rc (O low), is a commonly used measure of metal-semiconductor contact quality. It is independent of current flow and contact geometry, and depends only on the transport properties of the metal to semiconductor junction. Unfortunately, extraction of rho (c) obtained from test structures differing in size of design often disagree by as much as an order of magnitude primarily because simple 1-D models which are used to extract the value of rho (c) can not account for fringing resistance associated with the 2-D nature of the current distribution around the contact.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA176885

Entities

People

  • Krishna C. Saraswat
  • R. Swanson
  • S. Swirhun
  • T. Schreyer
  • W. Loh

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffusion
  • Electrical Engineering
  • Engineering
  • Equations
  • Extraction
  • Geometry
  • Measurement
  • Resistance
  • Resistors
  • Semiconductor Junctions
  • Semiconductors
  • Simulations
  • Transmission Lines
  • Transport Properties
  • Two Dimensional

Readers

  • Electrical Engineering
  • Materials Science and Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene