Instrumentation for Picosecond Optical Electronics Research.
Abstract
An electrooptic (EO) sampling system for high-speed measurements on galium arsenide (GaAs) integrated circuits (IC's) was developed. This measurement technique is based on the linear electrooptic effect in GaAs. Using longitudinal probing geometry, sub-bandgap energy infrared light is passed through the substrate of a GaAs IC, reflected off some circuit metallization, and passed through a polarizer, resulting in an intensity of change of the light past the polarizer proportional to the voltage across the substate. To achieve short temporal resolution, the signal generating electronics for driving the IC's are phase locked to the repetition rate of a mode-locked laser system to allow for repetitively sampled measurements of time waveforms. Since the probe is an optical beam, the technique is non-contact, non-destructive, and non-invasive in that the test point is not leaded with 50 ohms or any parasitic impedences.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1986
- Accession Number
- ADA176952
Entities
People
- D. M. Bloom
Organizations
- Stanford University