Design and Fabrication of Submicron Magnetic Bubble Device Technology.

Abstract

Work was carried out on high density (16 to 64 Mbit/sq cm) magnetic bubble device technology. Highlights of the research include the successful fabrication of silicon MOSFETS on bubble garnet substrates and the development of ion implanted bubble devices utilizing 0.5 micrometers bubbles in garnets with isotropic magnetostriction. In addition, studies of the effects of ion implantation on garnet lead to improved fabrication techniques for the 0.5 micrometers devices. Chips utilizing 1 micrometer bubbles were demonstrated to have about 9% bias field margins at 50 Oe drive, and a numerical model was developed to model current accessed ion implanted devices. Keywords: Bubble Memory; Ion Implantation; Garnet; Silicon on Insulator; Silicon on Garnet.

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Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1986
Accession Number
ADA177070

Entities

People

  • C. L. Bauer
  • D. W. Greve
  • M. Alex
  • M. H. Kryder
  • R. O. Campbell

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Sensors

DTIC Thesaurus Topics

  • Bubble Memories
  • Computer Programs
  • Computers
  • Current Density
  • Data Storage Systems
  • Detectors
  • Diameters
  • Electron Microscopy
  • Fabrication
  • Failure Mode And Effect Analysis
  • Graphics
  • Magnetic Properties
  • Materials Processing
  • Measurement
  • Microscopes
  • Physical Properties
  • Thickness

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Underwater engineering and Marine Technology.

Technology Areas

  • Microelectronics