Deep Levels in Ion Implanted GaAs (Gallium Arsenide)
Abstract
In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 23, 1986
- Accession Number
- ADA177072
Entities
People
- Harry B. Dietrich
- Richard Magno
Organizations
- United States Naval Research Laboratory