Strength and Structure of Ga(1-x)In(x)As Alloys
Abstract
Substantial solid solution strengthening of gallium arsenide by In acting as indium arsenide units has recently been predicted for an intermediate temperature, plateau region. This strengthening could account, in part, for the reduction of dislocation density in GaAs single crystals grown from the melt. A high temperature hardness tester was designed and constructed for use to 900 C. Measurements have been carried out on (100) GaAs, Ga0.9975 In0.0025 As and Ga 0. 99 In 0.01 As wafers, all of which contain small amounts of boron. Results show a significant strengthening effect in In-doped GaAs. A nominally temperature- independent flow stress region is observed for all three alloys. The In-doped GaAs shows a higher plateau stress level with increasing In content, consistent with the solid solution hardening is sufficient to explain the reduction in dislocation density with In additions. Electron microscopy is used to interrelate the mechanical properties of these alloys to their dislocated structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1986
- Accession Number
- ADA177180
Entities
People
- John P. Hirth
- Katherine Faber
Organizations
- Ohio State University