Study of Grown-in Defects and Transport Properties versus Growth Parameters in III-V Epitaxial Films.
Abstract
Investigation on the nature of deep-level defects in Gallium Arsenide and Aluminum sub x Gallium sub 1-x Arsenide (e.g., EL2 and DX center) grown under the various conditions has been performed by; 1) modeling the physical origins of EL2 center in GaAs based on the kinetic reaction equations and the analysis of field-enhanced emission rate, 2) correlation of deep-level defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition to the various growth parameters, 3) determination of field enhanced thermal emission rate of deep-level defects by reverse-biased deep level transient spectroscopy, 4) study on the Be- and Sn- related complex defects in LPE grown Aluminum sub x Gallium sub 1-x Arsenide (0.2 <x< 0.5), and 5) accurate determination of very large density of DX center in Sn-doped Aluminum Gallium Arsenide, and 6) effects of DX center and spatial distribution of electrons on the density of two-dimensional electron gas in GaAs/ALGaAs modulation doped heterojunction structure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 05, 1987
- Accession Number
- ADA177221
Entities
People
- Shengsan Li
Organizations
- University of Florida