Semiconductor Engineering for High-Speed Devices
Abstract
This report summarizes major accomplishments covering the period 15 June to 15 September 1986. Section I describes CPA calculations of the group velocity and the mean free path. These numbers are needed to design ballistic transport devices. We have determined the optimum angles and energies for several of the most promising alloys. Calculations of the effect of anisotropicity and intervalley scattering mediated by ionized impurities on v-E characteristic are described in Section II. Based on the more accurate evaluations of the band structures, and alloy and impurity scattering, we suggest promising candidate materials for high-speed devices. Section II is a concise statement of SRI's conclusions and recommendations. Section IV is devoted to administrative matters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1986
- Accession Number
- ADA177254
Entities
People
- A. B. Chen
- A. Sher
- Siddhartha Krishnamurthy
Organizations
- SRI International