Rapid Thermal Oxidation and Nitridation of Silicon,
Abstract
Rapid thermal processing of silicon in oxygen and ammonia reactive ambients was employed to grow thin layers of Silicon dixoide, silicon nitride and nitroxide for high-quality gate insulators of submicron CMOS VLSI. Rapid thermal oxidation of (100) silicon in dry oxygen exhibited a nonlinear growth in the short-time regime. The oxide-growth rate rises as the oxidation time is reduced, and the highest rate occurs for the shortest rapid oxidation time. The formation kinetics of the surface and interface nitrogen-rich layers in rapidly nitrided oxide dielectrics were analyzed and correlated to their electrical performance. Rapid thermal nitridation of approx. 100 A SiO2 on silicon results in a negative shift of flatband voltage, a slight rise in surface-state density, a higher low-field and a lower high field conductivity, an improvement in the dielectric breakdown field, modified trapping characteristics, and a slower generation rate of new surfce states by the high-field electrical stress.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1986
- Accession Number
- ADA177295
Entities
People
- Krishna C. Saraswat
- Mehrdad M. Moslehi
- Steven C. Shatas
Organizations
- Stanford University