Interfacial and Breakdown Characteristics of MOS Devices with Rapidly Grown Ultrathin SiO2 Gate Insulators,
Abstract
Metal-oxide-semiconductor devices fabricated with tungsten/n+ polysilicon composite gates and subhundred-angstrom SiO2 gate insulators grown by rapid thermal oxidation were characterized by various electrical measurements. The as-fabricated devices with unannealed rapidly grown oxides exhibited breakdown characteristics superior to furnace-grown oxides as evidenced by their excellent breakdown uniformity, an average breakdown field of 15 MV/cm, and an average breakdown charge density of over 50 C/ sq cm 2 at a stress current density of 1 A/sq cm. The preoxidation surface cleaning procedure was observed to affect the charge-to-breakdown and the densities of fixed oxide charges and surface states in these MOS structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1986
- Accession Number
- ADA177331
Entities
People
- James D. Meindl
- Krishna C. Saraswat
- Mehrdad M. Moslehi
- Steven C. Shatas
Organizations
- Stanford University