Control of the Surface Reactivity of the Si(100) Surface.
Abstract
Molecular beam methods and temperature programmed desorption have been used to probe the reaction of several hydrocarbons with the Silicon (100) surface at cryogenic temperatures. It has been found that the kinetics of the surface reaction with the C=C bond can be strongly influenced by the production of active surface sites using prebombardment with Ar ions. The chemistry of the adsorbate is also influence by electron bombardment of the adsorbed layer. Conversely, capping of active sites with atomic hydrogen retards the kinetics of the surface reaction. This work forms a first step in using the methods of surface kinetics and spectroscopy to probe the details of the elementary steps at work in chemical vapor deposition and plasma vapor deposition, leading to the production of Silicon carbide films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 16, 1987
- Accession Number
- ADA177429
Entities
People
- John Yates
- L. Muelhoff
- Michael J. Bozack
- Wolfgang J. Wolfgang J. Choyke
Organizations
- University of Pittsburgh