Microwave Semiconductor Research-Materials, Devices and Circuits.

Abstract

This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth. The following specific tasks are pursued: Develop an improved understanding of the role of the substrate and the growth parameters on the quality of device structures on GaAs and related materials grown by OMVPE. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1987
Accession Number
ADA177933

Entities

People

  • C. L. Tang
  • J. M. Ballantyne
  • J. P. Krusius
  • L. F. Eastman
  • W. H. Ku

Organizations

  • Cornell University College of Engineering

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Engineered Materials
  • Epitaxial Growth
  • Gallium Arsenides
  • Materials
  • Microwaves
  • Millimeter Waves
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Semiconductors
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics