Laser Materials for the 0.67 Micrometers to 2.5 Micrometers Range.

Abstract

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 micrometers. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above. Keywords: Lasers; Refractive Index; Bandgap.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1987
Accession Number
ADA178176

Entities

People

  • Ivan Ladany
  • Minoru Toda
  • Ramon U. Martinelli
  • Thomas J. Zamerowski

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Chemical Vapor Deposition
  • Detection
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Laser Diodes
  • P-N Junctions
  • Power Electronics
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Visible Spectra

Fields of Study

  • Engineering

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Directed Energy
  • Microelectronics