Influence of Ionizing Radiations and Electrical Overstressings on MOS (Metal-Oxide Semiconductors) Devices: A Comparison.

Abstract

Primary mode of failure and/or degradation of MOSFETs due to oxide charge and surface effects can result either from ionizing radiations or from electrical overstressings. In either case, the resulting damage can be characterized by a global parametric degradation specified in terms of device noise characteristics. That is, the net effect of charge trapping and the associated occupation of surface states can be viewed as random/fluctuation phenomena which manifest as the device noise. Thus a common noise model can be prescribed to represent tha analogous influence of ionizing radiations and electrical overstressings. Relevant theoretical results and measured data are presented. Keywords: Mosfet semiconductors; Radiation damage.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1987
Accession Number
ADA178214

Entities

People

  • Ibrahim R. Turkman
  • Perambur S. Neelakantaswamy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electrical Engineering
  • Electron Holes
  • Failure Mode And Effect Analysis
  • Hardening
  • Ionization
  • Ionizing Radiation
  • Military Research
  • Radiation
  • Radiation Dosage
  • Radiation Effects
  • Radiation Hardening
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Thickness
  • Transistors
  • X Rays

Fields of Study

  • Engineering

Readers

  • Acoustics.
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene