Characterization of Material Device Structures.

Abstract

Impurities and defects in semiconducting and semi-insulating GaAs and other III-V compounds have been investigated by electrical, optical, and mass spectroscopic techniques. Modulation-doped field-effect transistors have been fabricated and tested. A CAE/CAD environment has been implemented for the design, development, and evaluation of electronic circuitry. Keywords include: GaAs, Antisite, AlGaAs, InGaAs, Modulation-doped, III-V Compounds, Semi-insulating, Ion Implantation, Native Defects, Hall Effect, and Quantum Well.

Document Details

Document Type
Technical Report
Publication Date
Feb 11, 1987
Accession Number
ADA178262

Entities

People

  • D. C. Look
  • Dennis C. Walters
  • George E. Norris
  • Phil W. Yu
  • William M. Theis

Organizations

  • Wright State University

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Environment
  • Field Effect Transistors
  • Hall Effect
  • High Electron Mobility Transistors
  • Implantation
  • Impurities
  • Ion Implantation
  • Ions
  • Materials
  • Modulation
  • Quantum Wells
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing