A New Method for Analyzing Thin Side Wall Inhibitor Layers,

Abstract

Etch inhibitor layers are key to anisotropy for a number of dry etch processes, yet little is known about these layers because of the difficulty in analyzing them on the side walls where they form. This paper shows that an Al grid suspended above an etching surface can be used to suppress ion bombardment and allow the inhibitor to form on large horizontal surfaces which can be easily analyzed. The effect of ion bombardment on the nature of the inhibitor layer can also be elucidated using this technique. In conjunction with X ray Photoelectron Spectroscopy, this method was used to look at the polymeric inhibitor formed during Silicon etching in SF6/C2CLF5 with and without the presence of photoresist.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1987
Accession Number
ADA178324

Entities

People

  • A. J. Bariya
  • J. P. Mcvittie
  • T. A. Lin

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Chemical Engineering
  • Chemistry
  • Collisions
  • Electric Fields
  • Etching
  • Films
  • Fluorine
  • Inhibitors
  • Ion Bombardment
  • Materials
  • Mean Free Path
  • Measurement
  • Polymers
  • Thin Films
  • X Ray Photoelectron Spectroscopy
  • X Rays

Readers

  • Molecular and Cellular Biochemistry
  • Nanofabrication and Microfabrication.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene