Focused Ion Beam Fabrication of Graded Channel FET's (Field Effect Transistors) in GaAs and Si.

Abstract

The aim of this program is to fabricate field effect transistors in Silicon and GaAs in which the doping in the channel is varied as a function of distance from source to drain. The focused ion beam machine is a unique tool which is capable of producing such graded implants. In achieving this goal alignment procedures of the focused ion beam to existing features on the wafer have to be developed, and the focused ion beam implants must be characterized and compared to conventional implants. In addition, models of the behavior of the graded channel devices must be developed.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1987
Accession Number
ADA178339

Entities

People

  • John J. Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Buildings And Structures
  • Classification
  • Contracts
  • Coordinate Systems
  • Electronics
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Implantation
  • Ion Beams
  • Ions
  • Management Personnel
  • Program Management
  • Refining
  • Security
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology