Submicron Characterization of the Atomic and Electronic Structure of Defects in Semiconductors.

Abstract

New submicron defect characterisation techniques gave been developed, including energy loss spectroscopy and cathodoluminesence in TEM. This has allowed the first observations of infra-red emission from groups of well characterised dislocations in silicon, and the spatial mapping of luminescence in GaAs. The basic theory and corresponding experiments have been developed for coherent bremsstrahlung and electron energy loss spectroscopy (E. L. S) (in Be2C in particular. ELS allows chemical and structural information to be obtained from subnanometer regions of material.

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Document Details

Document Type
Technical Report
Publication Date
Feb 03, 1987
Accession Number
ADA178458

Entities

People

  • J. C. Spence

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bremsstrahlung
  • Cathodoluminescence
  • Crystal Structure
  • Diffraction
  • Electron Beams
  • Electron Energy
  • Electron Microscopy
  • Electrons
  • Luminescence
  • Materials
  • Radiation
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene