Kinetic Modeling and Measurement of Active Species Distributions during Dry Etching,

Abstract

A simple kinetic dry etching model accounting for generation, loss, and transport of the reactive and by-product species is developed. To demonstrate and evaluate the model, the etching of silicon using sulfur hexafluonde + oxygen + argon in the plasma etch mode is investigated. Keywords: Silicon.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA178603

Entities

People

  • J. P. Mcvittie
  • K. S. Uhm
  • M. R. Kump
  • R. W. Dutton

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Accounting
  • Demographic Cohorts
  • Dry Etching
  • Etching
  • Fabrication
  • Manufacturing
  • Measurement
  • Transport Ships

Readers

  • Computational Modeling and Simulation
  • Molecular Photonics/Laser Physics
  • Nanofabrication and Microfabrication.