Stochastic Processes in CHEMFETs.
Abstract
The methodology for evaluation of the electrochemical parameters of both equilibrium and non-equilibrium processes using fluctuation analysis has been fully developed. This paper describing the basic aspects of this technique in a tutorial form has been submitted in hope that the new technique will find broader application within the electrochemical community. As a corrollary to this work we have studied the diffusional impedance of disk and ring microelectrodes and developed theory for the Warburg impedance of these electrodes. Work on chemically modified suspended gate field effects transistor has continued very successfully. We have been able to incorporate nitroarene moieties into polypyrrole and thus create an organic semiconductor with selectivity to arenes. Design of improvee top passivation layers for chemical sensors began in January. Deposition and characterization of thin silicon carbide films also began. Fabrication and preliminary testing of the first hole-in-the-rock FETs has been completed. the initial results indicates that this may be a valid technique for study of channel insulators in FET structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 16, 1987
- Accession Number
- ADA178841
Entities
People
- James J. Brophy
- Jiri Janata
Organizations
- University of Utah