Picosecond Optical Electronics.

Abstract

An electrooptic (EO) sampling system suitable for high speed measurements on gallium arsenide (GaAs) integrated circuits (IC's) was developed. This measurement technique is based on the linear electrooptic effect in GaAs. Using a longitudinal probing geometry, sub bandgap energy infrared light is passed through the substrate of a GaAs IC, reflected off some circuit metallization, and passed through a polarizer, resulting in an intensity change of the light past the polarizer proportional to the voltage across the substrate.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1986
Accession Number
ADA179061

Entities

People

  • D. M. Bloom

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electrical Engineering
  • Electro-Optic Modulators
  • Electronics
  • Electronics Laboratories
  • Gallium Arsenides
  • Integrated Circuits
  • Laser Pulses
  • Lasers
  • Measurement
  • Microwave Integrated Circuits
  • Modulation
  • Monolithic Microwave Integrated Circuits
  • Optical Properties
  • Optics
  • Repetition Rate
  • Semiconductors
  • Spectrum Analyzers

Fields of Study

  • Engineering
  • Physics

Readers

  • Image Processing and Computer Vision.
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics