Investigation of Electromigration in Thin Film Aluminum at Low Temperatures.
Abstract
This thesis project collects electromigration induced time to failure data from unglassed and glassed one percent silicon doped aluminum test patterns at four current densities: 4.5, 4.75, 5.5, and 6.25 mega-amps per square centimeter. At 4.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative thirteen and seventy degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electron-volts. At 4.75 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and eighty degrees centigrade. From the data, the activation energy is calculated to be between approximately 0.3 electron-volts between ten and eighty degrees centigrade. At 5.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and twenty degrees centigrade. From the data, the activation energy is calculated to be between 0.35 and 0.43 volts for temperatures between negative seven and twenty degrees centigrade. At 6.25 mega-amps per square centimeter, glassed pattern time to failure data is collected between negative thirteen and eighty degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electronvolts at temperatures between twenty and eighty degress centigrade. These ranges of activation energies indicate that surface electromigration is the dominant failure mechanism. Keywords: Electromigration; Low temperature; Silicon doped aluminum; Thin films; Aluminum.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 19, 1986
- Accession Number
- ADA179110
Entities
People
- David W. Banton
Organizations
- Air Force Institute of Technology