Microwave Semiconductor Research-Materials, Devices and Circuits.
Abstract
This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth. The following specific tasks are pursued: Develop an improved understanding of the role of the substrate and the growth parameters on the quality of device structures on GaAs and related materials grown by OMVPE. Investigate the frequency and power limits of power FET devices employing a two-dimensional electron gas in the channel. Produce semiconductor light emitters capable of high speed amplitude modulation. Investigate and improve heterojunction structures for transistor applications. Develop high speed receivers for optical communication using optical field effect transistors and large area epitaxial photoconductive detectors. Model and construct components and subsystems which can be useful as transmitters in optical communication systems. Improve direct method of broad band circuit design. Explore transient carrier transport in small III-V devices in boundary limited domain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1987
- Accession Number
- ADA179123
Entities
People
- C. L. Tang
- J. M. Ballantyne
- J. P. Krusius
- L. F. Eastman
- W. H. Ku
Organizations
- Cornell University College of Engineering