Superconducting Electronic Film Structures.

Abstract

Bulk samples of the newly discovered La-Sr-Cu-O Superconductors have been made which have critical onset temperatures over 38 K. The greater effectiveness of impurities (oxygen) compared to epitaxy for the stabilization of stoichiometric A15 Nb-Ge was demonstrated. The positive effect of oxides on the formation of A15 Nb-A1 was also shown. Experiments involving the deliberate addition of a contaminant (methane) during barrier deposition provided a major advance in the understanding of the processes required for producing high quality NbN-MgO-NbN junctions. A model for predicting the orientation of single crystal Nb and Nb-Sn films on sapphire was experimentally verified. Results were obtained which indicate that epitaxy is essential for NbN-Mg)-NbN trilayer processing if the junction is to be operated above 4.2 K.

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Document Details

Document Type
Technical Report
Publication Date
Jan 20, 1987
Accession Number
ADA179134

Entities

People

  • A. I. Braginski
  • J. R. Gavaler

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Contracts
  • Critical Temperature
  • Crystallography
  • Crystals
  • Electron Diffraction
  • Epitaxial Growth
  • Films
  • Impurities
  • Low Temperature
  • Materials
  • Pennsylvania
  • Scientific Research
  • Single Crystals
  • Superconductors
  • Thin Films
  • United States

Fields of Study

  • Physics

Readers

  • Superconducting Magnet Technology
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene