Photoluminescence Study of Germanium Implanted Gallium Arsenide.
Abstract
The low temperature photoluminescence properties of Ge implanted Gallium Arsenide has been analyzed. Samples were singly implanted with Ge and As, and with Ge and Ga. The substrate used was semi-insulating Chromium-doped GaAs. All ions were implanted at room temperature, with an implantation energy of 120 KeV. Dually implanted samples were first implanted with Ge, and then with either As or Ga. All samples were encapsulated before annealing with approximately 1000 A of Silicon Nitride which was subsequently removed prior to photoluminescence measurements. All samples were annealed at 900 C for 15 minutes. Two separate photoluminescence peaks related to Ge acceptors were found. They were due to a Ge donor-Ge acceptor transition and a conduction band-Ge acceptor transition. A single photoluminescence peak related to Ge donors was found. It was due to an exciton bound to a neutral donor or an ionized donor transition. Ge acceptor related peaks were found to be dominant in lower dose Ge implanted samples, and the Ge donor related peak was found to be dominant in higher dose Ge implanted samples. These characteristics were significantly modified, however, by the dual implantations. The Ge donor related peak was enhanced, and the Ge acceptor related peaks were suppressed, by the additional As implantation. To a lesser extent, the opposite was true for the additional Ga implantation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1985
- Accession Number
- ADA179232
Entities
People
- Barry P. Thoma
Organizations
- Air Force Institute of Technology