Continuation of Research in the Development of High Sensitivity X-Ray and Electron Beam Resists Processes.
Abstract
Electron beam lithography is used for mask making, and offers promise for fabrication of high density integrated circuits since it does not have the inherent limitations of optical lithography. Investigations were conducted to obtain a better understanding of e beam resist dissolution with a direct application to the image transfer step in e beam lithography. Studies were performed with poly(methyl methacrylate), PMMA, which is a commonly used electron beam resist. The studies included the monitoring of resist swelling and dissolution kinetics using in-situ ellipsometry, and modeling efforts to describe the basic physics of resist dissolution.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 25, 1987
- Accession Number
- ADA179499
Entities
People
- Alexis T. Bell
- David Soong
- Dennis Hess
Organizations
- University of California, Berkeley