Study of Quantum Mechanical Effects in Deep Submicron, Grating-Gate Field Effect Transistors.
Abstract
This research program investigates the effect of extreme submicron spatial modulation of the electrostatic potential on the transport of electrons in silicon and in III-V compound semiconductor devices. The test vehicle is the so called grating gate FET (GGFET). When made to move in a direction perpendicular to the potential modulation, i.e., perpendicular to the grating gate, electrons experience a surface superlattice (SSL) effect. When moving along the potential modulation electrons are restricted to only one degree of freedom and thus constitute a one dimensional system. The major accomplishments to date are in process technology and design of the devices. They are: (1) Double X ray/deep UV exposure of PMMA to simultaneously define fine and coarse patterns; (2) High temperature (950 C) anneal of Silicon wafer after delineation of tungsten conductor patterns, to eliminate x ray damage of silicon dioxide; and (3) Design of Gallium/Gallium Aluminum Arsenide structure for the implementation of the III-V GGFET. Keywords: MOSFET Semiconductors; Field effect transistors; X ray lithography.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1986
- Accession Number
- ADA179617
Entities
People
- Dimitri A Antoniadis
- Henry I. Smith
Organizations
- Massachusetts Institute of Technology