Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials.
Abstract
A fundamental program of research on the mechanical properties of microelectronic thin film materials has been initiated at Stanford University. In this Interim Scientific Report, some of the progress made during the first year of the program is reviewed. We have made very rapid progress, especially in the development of new experimental techniques for measuring mechanical properties. The work has already lead to several publications and to an equal number of invited oral presentations, both of which are listed at the end of this report. The primary motivation of this work is to understand the mechanical properties of microelectronic thin film materials. Although these materials are not structural materials as such, they are, nevertheless, expected to withstand very high stresses, both during manufacturing and in service. As a consequence, the mechanical properties of materials are almost as important as their electronic properties for successful device applications. Because these materials often exist only as thin films bonded to substrates, it is necessary to study their mechanical properties in that state. Much of the work of this research program deals with the development of techniques and methods for studying these properties. Also, these techniques are being used to measure various thin film mechanical properties and efforts are being made to understand these properties in fundamental terms.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1987
- Accession Number
- ADA179699
Entities
People
- William D. Nix
Organizations
- Stanford University