Quaternary Narrow-Band Semiconductors (HgTe)x(InSb)1-X for Far-Infrared Detectors.

Abstract

This report includes a description of results from work on an investigation of the quarternary system (HgTe) (x) (InSb) (1-x). The program of the reported year of work was, first of all, directed toward improvement of the crystal growth process with the purpose of preparation of the crystals suitable for use in the models infrared detectors on the basis of the (HgTe) (x) (InSb) (1-x) alloys (IMAT alloys). The second and main part of the program was manufacturing of the models of the IR detectors and their characterization. It was shown that the curvature of the crystallization front in the Bridgman process could be controlled two ways, namely, by (i) a proper choice of the ratio of total length of the growing crystal to its diameter, and (ii) a controllable proportion between the radiative thermal flux and the thermal conductance flux along the axis of the ingot.

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1986
Accession Number
ADA179764

Entities

People

  • Lev I. Berger

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemical Reactions
  • Crystal Growth
  • Crystal Lattices
  • Crystal Structure
  • Crystallization
  • Crystals
  • Detection
  • Detectors
  • Geometry
  • Heat Energy
  • Infrared Detection
  • Infrared Detectors
  • Ionization
  • Materials
  • Optical Properties
  • Semiconductors

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics