Clustering and Ordering in III-V Alloys.

Abstract

ZnSnP2 is a potentially useful semiconductor which can have either the sphalerite structure or the chalcopyrite structure with no tetragonal distortion (c=2a). We have grown ZnSnP2 on various orientations of GaAs by liquid phase epitaxy and found that the best growth occurs on (110) surfaces. Double-crystal x-ray diffraction measurements indicate that these (110) layers have a lattice constant of 5.6507A, while (111) As layers grown under identical conditions have a lattice constant of 5.6532A, which matches GaAs to within + or - .0002A. Keywords: Heterojunctions, Interfacial energy gaps, Alloy formation, Ling range ordering, Primitive layered structures, Aluminum gallium arsenides, Zinc compounds, Tin compounds, Phosphorus compounds.

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Document Details

Document Type
Technical Report
Publication Date
Mar 02, 1987
Accession Number
ADA179767

Entities

People

  • C. M. Wolfe
  • G. A. Davis
  • M. W. Muller
  • P. A. Fedders
  • Sheng‐Jen Hsieh

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Structures
  • Crystal Lattices
  • Crystal Structure
  • Crystallography
  • Crystals
  • Diffraction
  • Distortion
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Liquid Phase Epitaxy
  • Materials
  • Phase Diagrams
  • Scattering
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene