Theory of Below-Band-Gap Photoluminescence in a Gallium Arsenide Doping Superlattice.

Abstract

This report presents a simplified calculation of the photoluminescence spectrum of a gallium arsenide doping superlattice. The electronic states in the conduction band of the superlattice are taken to be harmonic oscillator-like in the doping direction and free particle-like in the transverse directions. Localized acceptor states above the valence band are represented by spherically symmetric hydrogenic functions. Analytic expressions for the electric dipole matrix element between these states are obtained and are employed in the numerical evaluation of the spectrum for different electronhole distribution functions. Keywords: Doping, superlattice, photoluminescence, gallium arsenides.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1986
Accession Number
ADA179941

Entities

People

  • John D. Bruno

Organizations

  • Harry Diamond Laboratories

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Charge Density
  • Classification
  • Conduction Bands
  • Crystal Structure
  • Electromagnetic Fields
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Ground State
  • Lasers
  • Military Research
  • Optical Properties
  • Two Dimensional
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics