Electrical Characterization of VLSI RAMs and PROMs.

Abstract

Extensive electrical characterizations were performed on 256K bit and 512K bit ultra violet erasable PROMs (UVEPROMs), 64K bit electrically erasable PROMs (EEPROMs), 64K static RAMs (organized as 8Kx8 bits), 256K dynamic RAMs (CMOS) and 32R16 PAL devices available from the merchant semiconductor industry. Based on the data obtained from the devices, parameter limits were established and proposed for the draft MIL-M-38510/XXX specifications. The data, proposed limits and test methodologies and the related discussions are presented. Keywords: Memory devices; Random access memories; Monolithic structures; Semiconductors; Complementary metal oxide semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1986
Accession Number
ADA180114

Entities

People

  • D. Giammarrusco
  • E. Rolley
  • G. Hornbuckle
  • M. Formoso
  • R. Henrikson

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Communication Systems
  • Complementary Metal-Oxide Semiconductors
  • Computer Programming
  • Computers
  • Fabrication
  • Integrated Circuits
  • Logic
  • Logic Devices
  • Logic Gates
  • Memory Devices
  • Plastic Explosives
  • Semiconductors
  • Standards
  • Test And Evaluation
  • Test Equipment
  • Test Methods
  • Very Large Scale Integration

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics