DLTS Analysis and Modeling of Electron and Proton Irradiated (AlGa)As/GaAs Multijunction Solar Cells.

Abstract

A numerical model has been developed to calculate the displacement defects, the damage constant of minority carrier diffusion length and the degradation of short circuit current (I sub sc), open circuit voltage (V sub oc) and conversion efficiency (eta sub c) in the 1 MeV electron and proton irradiated AlGaAs/GaAs/InGaAs multijunction junction solar cell under normal incidence conditions. The results show good agreement between our calculated values and the experimental data of I sub sc, V sub oc and eta sub c. In addition, DLTS analysis of defects in AlGaAs p-n junction solar cells irradiated by 1-MeV electrons has also been carried out in this work. The I-V analysis on several MOCVD-grown Ge/GaAs tunnel junction diodes has also been made in this study. Keywords: Gallium Arsenide, Aluminum Gallium Arsenide; Idium Gallium Arsenide; Deep Level Transient Spectroscopy; Germanium; Radiation Defects; Multijunction Solar Cells; Tunnel Junctions.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1987
Accession Number
ADA180234

Entities

People

  • Shengsan Li

Organizations

  • University of Florida

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Conduction Bands
  • Electrical Engineering
  • Electron Irradiation
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Equations
  • Experimental Data
  • Gallium Arsenides
  • Governments
  • Low Temperature
  • Materials
  • P-N Junctions
  • Scattering
  • Semiconductors
  • Solar Cells

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics