Device Physics of Superlattices and Small Structures.

Abstract

Experimental and theoretical studies are presented of HgTe CdTe superlattices. We report the first study of the photoluminescence and photoconductivity spectra of superlattices. We find that Photoluminescence, photoconductivity and infrared absorption all point to the same band gap for the superlattice. Theoretical studies of these superlattices have given the first estimates of the magnitude of the optical absorption, the first study of the role of strain, and the first study of the role of the band offset in determining the properties of superlattices. We have also invented a novel electronic device that has negative resistance based on HgCdTe-CdTe-HgCdTe heterostructures. We have carried out the first theoretical studies of superlattices that include dilute magnetic semiconductors. Superlattices of CdTe-ZnTe have been studied experimentally and theoretically to give the first investigations of the properties of possible II-IV visible light emitters.

Document Details

Document Type
Technical Report
Publication Date
Apr 10, 1987
Accession Number
ADA180473

Entities

People

  • T. C. Mcgill

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Band Structures
  • Compound Semiconductors
  • Electronics
  • Energy Bands
  • Heterojunctions
  • Optical Absorption
  • Photoconductivity
  • Photoluminescence
  • Physical Properties
  • Resistance
  • Semiconductors
  • Spectra
  • Superlattices
  • Visible Spectra

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene