Characterization of Infrared Properties of Layered Semiconductors.
Abstract
The technique of infrared wavelength modulation absorption, photo-induced transient-spectroscopy, Raman scattering, and photo-mixing were developed for non-destructive characterization of layered semiconductors. Infrared wavelength modulation on semi-insulating GaAs reveals two resonant type peaks with fine structures near 0.37 and 0.40 eV as well as plateaus and thresholds at higher energies. The absorption at 0.37 eV is interpreted as due to the intra-center transition between levels of an accidental iron impurity. The absorption band near 0.40 eV can be annealed out by heat treatment and is characterized as belonging to a structural multi-level defect complex. Photo-induced-transient- spectroscopy technique also reveals an annealable level at 0.42 eV. Crystalline Arsenic was observed to grow on the surface of GaAs during exposure to continuous-wave laser radiation. A study of time development of Arsenic growth as revealed by Raman backscattering indicated that a surface diffusion process was responsible for limiting the growth process. Keywords: Infrared, Wavelengths, Modulation, Photo Induced Transients, Raman Scattering, Photo Mixing, Deep Levels, Lifetime, Drift, Velocity, Oxides, Growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 20, 1987
- Accession Number
- ADA181016
Entities
People
- Rubin Braunstein
Organizations
- University of California, Los Angeles